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| zener diode chips for esd protection WT-Z106P-4-12 1. feature: 2. structure: 3. size: 4. electrical characteristics (ta=25 c) 5. drawing: 2-1 planar type: silicon diode 3-1. * chip size : 6.88 mils x 6.88 mils (175m x 17.5m ). 3-2. chip thickness : 3.3 0.6 mils (85 15m ). 3-3. active area : 4.1 mils x 4.1 mils (105m x 105m). 3-4. bonding pad : 4.5 mils x 4.5 mils (115m x 115m) . 3-5. pattern drawing : refer to the attached drawing. * including scribing line. the chip size is about 5.9mil(0.150mm) after dicing. 2-2 electrodes: top side:aluminum alloy(anode). back side:gold layer(cathode). parameter symbol condition min. typ. max. unit zener voltage reverse leakage v r =10v 100 na 11 - - - 0.75 - - - 13 v current i f = 20m a 1. 2 v electrostatic discharge esd 8.0 kv top side n - sub p bonding pa d back side weitron technology co., ltd. tel:886-2-29148158 fax:886-2-29106796 http://www.weitron.com.tw 05-dec-06 i z =5ma hbm mil-std 883 forward voltage i r v z v f 1-1 silicon zener diode chips for electrostatic discharge(esd) protection application 1-2 this specification applies to p-type silicon zener diode chipdevice no:WT-Z106P-4-12
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